"UNUSUAL" AZIMUTHAL ORIENTATION RELATIONSHIP IN THE HETEROEPITAXIAL SYSTEM "GALLIUM NITRIDE ON SPINEL"

Andrew Efimov, Andrew Lebedev

Ioffe Institute, Polytekhnitcheskaya Str. 26 St.-Petersburg 194021 RUSSIA,
smirnov@smirnov.pti.spb.su

Keywords: gallium nitride, epitaxy, orientation relationship.

Heteroepitaxial systems "gallium nitride on foreign substrates" being very attractive for device application also are very interesting as model for understanding of fundamental problems of epitaxy. In particular, an existence of the set of orientation relationships in system "GaN on spinel" must be explained.

As it is shown in the paper, both theoretical and experimental investigations of GaN-layers on spinel substrates with various crystallographic orientation allows to determine and classify possible types of orientation relationships for growth of both hexagonal and cubic gallium nitride. Experimental data both presented in this paper and published earlier, with a few exceptions are consistent with the results of theoretical considerations.