GRAZING INCIDENCE Small Angle X-ray Scattering STUDY OF IRRADIATION INDUCED DEFECTS IN SILICON
P. Dubcek1,2, B. Pivac2, S. Bernstorff1, H. Amenitsch3, R.Tonini,4 F. Corni 4 and G. Ottaviani4
1Sincrotrone Trieste, SS 14 km 163,5,
34012 Bassovizza (TS), Italy
2Ruder Boskovic Institute, Bijenicka
54, 10000 Zagreb, Croatia
3Institute for Biophysics and X-ray
Structure Research, Austrian Academy of Sciences, Steyrerg. 17,
8010 Graz, Austria
4University of Modena, Physics
Department, Via Campi 213a, 41100 Modena, Italy
Structural defects in monocrystalline silicon samples, irradiated with a dose of 2E16 He ions per square centimetre at 77K and annealed at different temperatures between 100 and 800 oC, were investigated using small angle X-ray scattering. Because the induced defects were expected to be present in a thin layer close to surface, grazing angle incidence was chosen due to its surface sensitivity.
The aim of the experiment was to determine the annealing and irradiation conditions for bubbles formation within the solid film, which can have important application in technology.
The data show formation of a thin film with a sharp transition between the defect rich region and non affected bulk. The thickness of this film varies slightly with the change of the annealing temperature. At about 600oC formation of particles in few nanometer size range is detected, and this is interpreted as a confirmation of the bubbles formation within the film.